20dB 100W Flanged RF Attenuator DC-3GHz 50 Ohm BeO Ceramic
20dB 100W Flanged RF Attenuator DC-3GHz 50 Ohm BeO Ceramic
20dB 100W Flanged RF Attenuator — DC to 3.0 GHz, 50 Ohm, BeO Substrate
This high-power flanged RF attenuator delivers precise 20dB signal attenuation across a broad frequency range from DC to 3.0 GHz. Built on a Beryllium Oxide (BeO) ceramic substrate, it offers exceptional thermal conductivity for stable performance under demanding power levels up to 100 watts. The full-flange mounting design enables efficient heat dissipation and secure chassis integration — ideal for RF labs, broadcast systems, military communications, and high-power test equipment.
With a low VSWR of ≤1.25:1 and a 50-ohm nominal impedance, this attenuator maintains excellent signal integrity across your transmission line. The tight attenuation tolerance of ±0.8dB ensures consistent, repeatable results in precision RF applications.
Made in Mainland China.
Key Specifications
- Frequency Range: DC – 3.0 GHz
- Power Rating: 100W
- Attenuation Value: 20 dB
- Attenuation Tolerance: ±0.8 dB
- Nominal Impedance: 50 Ohms ±5%
- VSWR: ≤1.25:1
- Substrate Material: Beryllium Oxide (BeO) Ceramic
- Operating Temperature: -55°C to +150°C
- Temperature Coefficient: ≤150 ppm/°C
- Mounting Style: Full Flange
Why Choose a BeO Ceramic Substrate?
Beryllium Oxide ceramic is one of the best thermally conductive materials used in RF components. It allows this attenuator to handle sustained high-power loads without performance degradation, making it the go-to choice for engineers who need reliability in high-wattage RF environments. Learn more about RF component standards and electromagnetic compatibility from the NIST Electromagnetics Division.
Ideal Applications
- High-power RF test benches and signal measurement setups
- Broadcast transmitter systems
- Military and defense communications equipment
- Radar and satellite ground station testing
- Wireless infrastructure and cellular base station R&D
Frequently Asked Questions
Q: What is the frequency range of this 20dB flanged RF attenuator?
A: This attenuator operates from DC up to 3.0 GHz, making it suitable for a wide range of RF and microwave applications including test and measurement, broadcast, and communications systems.
Q: Why is Beryllium Oxide (BeO) used as the substrate material in high-power attenuators?
A: Beryllium Oxide ceramic offers extremely high thermal conductivity, which allows the attenuator to efficiently dissipate heat generated at high power levels (up to 100W). This ensures long-term reliability and consistent attenuation performance even under sustained load conditions.
Q: What does the full-flange mounting design provide?
A: The full-flange design allows the attenuator to be bolted directly to a heatsink or chassis, maximizing thermal contact and mechanical stability. This is critical for high-power RF environments where both heat management and a secure physical mount are essential.
Q: What is the impedance and VSWR of this attenuator?
A: The nominal impedance is 50 ohms (±5%), and the VSWR is ≤1.25:1. This low VSWR ensures minimal signal reflection and excellent impedance matching across the full DC–3.0 GHz frequency band.